In this paper, the high-repetition-rate passively Q-switched (PQS) and the femtosecond continuous-wave mode-locked (CWML) lasers are successfully obtained with 2D black arsenic-phosphorus (b-AsP) nanosheets as saturable absorber (SA) at 1 μm for the first time, to the best of our knowledge. The saturable absorption properties and ultrafast carrier dynamics of the 2D b-AsP SA are explored by Z-scan and pump-probe techniques. Moreover, according to the measurement of desired nonlinear optical characteristics of the relaxation time of 27 ps and the modulation depth of 7.14%, the PQS and CWML lasers are demonstrated with the highest repetition rate of 2.26 MHz in the PQS laser and the pulse width of 470 fs in the CWML laser. The results show 2D b-AsP SA has enormous potential for pulse modulation in solid-state bulk lasers.

Rhenium disulfide (ReS2), a member of group VII transition metal dichalcogenides (TMDs), has attracted increasing attention because of its unique distorted 1T structure and electronic and optical properties, which are much different from those of group VI TMDs (MoS2, WS2, MoSe2, WSe2, etc.). It has been proved that bulk ReS2 behaves as a stack of electronically and vibrationally decoupled monolayers, which offers remarkable possibilities to prepare a monolayer ReS2 facilely and offers a novel platform to study photonic properties of TMDs. However, due to the large and layer-independent bandgap, the nonlinear optical properties of ReS2 from the visible to mid-infrared spectral range have not yet been investigated. Here, the band structure of ReS2 with the introduction of defects is simulated by the ab initio method, and the results indicate that the bandgap can be reduced from 1.38 to 0.54 eV with the introduction of defects in a suitable range. In the experiment, using a bulk ReS2 with suitable defects as the raw material, a few-layered broadband ReS2 saturable absorber (SA) is prepared by the liquid phase exfoliation method. Using the as-prepared ReS2 SA, passively Q-switched solid-state lasers at wavelengths of 0.64, 1.064, and 1.991 μm are in

We demonstrate a high-pulse-energy, short-pulse-width passively Q-switched (PQS) Nd:YAG/V3+:YAG laser at 1.3 μm, which is end-pumped by a pulsed laser diode. During the PQS regime, a maximum total output pulse energy of 3.3 mJ is obtained under an absorbed pump pulse energy of 21.9 mJ. Up to 400 μJ single-pulse energy is realized with the shortest pulse width of 6.16 ns and a pulse repetition frequency of 34.1 kHz, corresponding to a peak power of 64.9 kW. The high-energy laser pulse is operated in the dual wavelengths of 1319 and 1338 nm, which is a potential laser source for THz generation.